3BHE009681R0101 3BHB012961R0001 5SHX2645L0002

Overview

The ABB 3BHE009681R0101 3BHB012961R0001 5SHX2645L0002 IGCT Module is a high-performance power semiconductor designed for demanding industrial applications. It integrates two IGBTs and a diode in a compact package, ensuring efficient and reliable performance for high-power management tasks.

Key Features

• Voltage Rating: Up to 650 V
• Current Rating: Up to 2645 A
• Switching Frequency: Up to 1 kHz
• Cooling Method: Forced air or liquid cooling
• Thermal Resistance: 0.015 K/W
• Operating Temperature Range: -40°C to +150°C (-40°F to +302°F)

Electrical Performance

• Integrated Components: Two IGBTs and one diode
• Switching Capability: High-frequency operation up to 1 kHz
• Thermal Management: Efficient heat dissipation via forced air or liquid cooling

Mechanical Characteristics

• Package Type: Compact integrated package
• Thermal Resistance (Junction to Case): 0.015 K/W
• Mounting Options: Suitable for various mounting configurations, ensuring flexible integration

Environmental and Operational Limits

• Operating Temperature Range: -40°C to +150°C (-40°F to +302°F)
• Storage Temperature Range: -40°C to +150°C (-40°F to +302°F)

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